Summary form only given. Recently, semiconductor saturable Bragg reflectors (SBRs) have been successfully developed for passive mode-locking of solid state lasers. In particular, we have developed a triple strained quantum well saturable Bragg reflector (SSBR) with saturation fluence as low as 12 /spl mu/J/cm/sup 2/. This suggests potential applications of this device for applications such as all-optical switching and modulation. In this work, we report a new type of SBR using triple strained-layer quantum wells as the absorbing layer which is named as as strained saturated Bragg reflector (SSBR). The time-resolved differential reflection (/spl Delta/R/R) in this SSBR with detailed variant pumping energies has been observed. The influence of carrier scattering and process of recombination on the temporal and spectral /spl Delta/R/R dynamics have been investigated.
Giant optical nonlinearity and ultrafast carrier dynamics of a strained quantum well saturable Bragg reflector (SSBR)
1999-01-01
262809 byte
Conference paper
Electronic Resource
English
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