Summary form only given. We report here GaAs-based low, power phototransceivers and phototransceiver arrays with vertically integrated resonant cavity LEDs (RCLEDs) and heterojunction phototransistors (HPTs). A novel integration scheme, based on a tunnel junction (TJ) ensures the simple processing, compact size and excellent performance of the arrays.


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    Title :

    Phototransceiver arrays with phototransistors and resonant cavity light emitting diodes vertically integrated with tunnel junctions


    Contributors:
    Zhou, W.D. (author) / Pradhan, S. (author) / Bhattacharya, P. (author) / Liu, W.K. (author) / Lubyshev, D. (author)


    Publication date :

    2001-01-01


    Size :

    179184 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English





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