Summary form only given. The effect of carrier induced refractive index change in semiconductor lasers has been studied extensively in the 1990s. Owing to the plasma effect, a region that is highly populated with charged carriers experiences a lowering of its refractive index. It is known that when the carrier density in the active region is increased by 10/sup 18/ cm/sup -3/, the refractive index can be depressed by an order of 10/sup -3/. In this report we describe the use of this mechanism to achieve horizontal confinement in a planar GaAs-AlGaAs slab waveguide. Currents are injected via two adjacent contact stripes forming anti-guiding regions immediately underneath the stripes.
Electrically controlled optical beam-steering/waveguiding in an active GaAs slab
1999-01-01
139899 byte
Conference paper
Electronic Resource
English
Nonlinear waveguiding in a photorefractive slab with nonlocal, diffusion-type nonlinearity
British Library Conference Proceedings | 1995
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