Summary form only given. The effect of carrier induced refractive index change in semiconductor lasers has been studied extensively in the 1990s. Owing to the plasma effect, a region that is highly populated with charged carriers experiences a lowering of its refractive index. It is known that when the carrier density in the active region is increased by 10/sup 18/ cm/sup -3/, the refractive index can be depressed by an order of 10/sup -3/. In this report we describe the use of this mechanism to achieve horizontal confinement in a planar GaAs-AlGaAs slab waveguide. Currents are injected via two adjacent contact stripes forming anti-guiding regions immediately underneath the stripes.


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    Title :

    Electrically controlled optical beam-steering/waveguiding in an active GaAs slab


    Contributors:
    Xuesong Dong, (author) / Wa, P.L. (author) / Loehr, J.P. (author) / Kaspi, R. (author)


    Publication date :

    1999-01-01


    Size :

    139899 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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