We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 /spl mu/m. Continuous-wave power >180 mW was achieved from a cavity volume /spl sim/0.001 mm/sup 3/ using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.


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    Title :

    A diamond-microchip GaInNAs VECSEL operating at 1315 nm


    Contributors:
    Smith, S.A. (author) / Hopkins, J.-M. (author) / Hastie, J.E. (author) / Calvez, S. (author) / Kemp, A.J. (author) / Burns, D. (author) / Dawson, M.D. (author)


    Publication date :

    2004-01-01


    Size :

    109276 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    A Diamond-Microchip GaInNAs VECSEL Operating at 1315nm

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


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    Nr. 1315

    DataCite | 1870

    Free access