Summary form only given. This paper reports the growth, fabrication, and characterization of the first solid source molecular beam epitaxially (SSMBE)-grown visible resonant cavity LED's. The epitaxial layers were grown by SSMBE on (100) Si-doped GaAs (2-inch) wafers.


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    Title :

    Oxide-confined AlGaInP/AlGaAs visible resonant cavity light-emitting diodes grown by solid source molecular beam epitaxy


    Contributors:
    Jalonen, M. (author) / Toivonen, M. (author) / Kongas, J. (author) / Savolainen, P. (author) / Salokatve, A. (author) / Pessa, M. (author)


    Publication date :

    1997-01-01


    Size :

    143239 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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