InGaAsN QW active lasers have shown promise as the material of choice for the active region of 1300-nm GaAs-based VCSELs. One of the challenges of growing InGaAsN QW lasers by MOCVD is due to the difficulties in incorporating N into the InGaAs QW, while maintaining a high optical quality film. The low purity of the N-precursor used in MOCVD (U-Dimethylhydrazine) is suspected as a possible reason for the low optical quality of MOCVD-grown InGaAsN QWs. In our approach, U-Dimethylhydrazine and AsH/sub 3/ are utilized in the growth of our InGaAsN QW.
High performance 1300-nm dilute-nitride quantum well lasers by MOCVD
2002-01-01
133279 byte
Conference paper
Electronic Resource
English
High Performance 1300-nm Dilute-Nitride Quantum Well Lasers by MOCVD
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