This paper presents the development of a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) based power processing unit (PPU) power supply for the High Voltage Hall Accelerator (HiVHAC) Hall effect thruster. The power converter utilizes SiC JFET power switches which have on-resistance an order of magnitude smaller than equivalent 600V rad-hard silicon MOSFETs. A prototype PPU power converter was developed which was able to achieve up to 700 V output voltage, 1.3 kW output power, 2.55 kW/kg gravimetric power density, and up to 92% efficiency. The converter operates on 80–160 V input and can dynamically control the output voltage between 200–700 V.


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    Title :

    Silicon carbide power processing unit for Hall effect thrusters


    Contributors:


    Publication date :

    2012-03-01


    Size :

    891322 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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