EA-modulator integrated DFB lasers have become one of the key devices in multigigabit long-distance lightwave communications. [1, 2] Recently, a new method of integrating photonic devices has been proposed, using the in-plane local bandgap energy control of the MQW structures during simultaneous selective area growth (SAG) by MOCVD. [3, 4] This technique offers a high optical coupling efficiency as well as reproducible fabrication, which are essential in such optical integrated devices. This paper describes an MQW EA-modulator integrated with a DFB laser, fabricated by SAG and a semi-insulating BH process, aimed at a high on/off ratio and high-speed operation.


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    Title :

    High-speed and low-drive-voltage MQW EA-modulator integrated DFB laser with semi-insulating BH structure


    Contributors:
    Aoki, M. (author) / Suzuki, M. (author) / Takahashi, M. (author) / Sano, H. (author) / Ido, T. (author) / Kawano, T. (author) / Takai, A. (author)


    Publication date :

    1992-01-01


    Size :

    144842 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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