High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.


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    Title :

    InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy


    Contributors:
    Kim, N.H. (author) / Cho, S.R. (author) / Lee, S.D. (author) / Ha, H.C. (author) / Bang, D.S. (author) / Yu, J.S. (author) / Oh, Y.K. (author) / Ma, J.S. (author) / Choo, A.G. (author) / Kim, T.I. (author)


    Publication date :

    1999-01-01


    Size :

    121634 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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