High speed and low chirp light sources are among the most essential components in long distance multigigabit optical communication systems. InGaAsP-InGaAsP electroabsorption (EA) modulator integrated DFB-LDs (EMILD) have attracted special interest because of their small size, low operating voltage and low chirp. In this paper, the optical and electrical characteristics of an InGaAs-InGaAsP MQW EMILD were studied.


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    Titel :

    InGaAs/InGaAsP MQW electroabsorption modulator integrated DFB-LD structure grown by selective area epitaxy


    Beteiligte:
    Kim, N.H. (Autor:in) / Cho, S.R. (Autor:in) / Lee, S.D. (Autor:in) / Ha, H.C. (Autor:in) / Bang, D.S. (Autor:in) / Yu, J.S. (Autor:in) / Oh, Y.K. (Autor:in) / Ma, J.S. (Autor:in) / Choo, A.G. (Autor:in) / Kim, T.I. (Autor:in)


    Erscheinungsdatum :

    1999-01-01


    Format / Umfang :

    121634 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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