Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.


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    Title :

    Semiconductor optical amplifiers


    Contributors:
    Verdiell, J.-M. (author) / Ziari, M. (author) / Mathur, A. (author)


    Publication date :

    1996-01-01


    Size :

    101496 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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