Polarization insensitive semiconductor amplifiers are important devices for many applications. Their small size, high-gain, and ability to be turned on and off fast offer interesting possibilities for photonic switches. We have used a design to implement polarization insensitivity. Quantum wells of alternative compressive and tensile direction of strained are stacked up in the active region. Compressively strained layers provide TE gain through electron-heavy hole recombinations, while tensile strained wells provide predominantly TM gain through electron to light hole recombinations. Amplifiers can be fabricated at both 1.3 and 1.5 /spl mu/m wavelength.


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    Titel :

    Semiconductor optical amplifiers


    Beteiligte:
    Verdiell, J.-M. (Autor:in) / Ziari, M. (Autor:in) / Mathur, A. (Autor:in)


    Erscheinungsdatum :

    1996-01-01


    Format / Umfang :

    101496 byte




    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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