This paper summarizes the unique performance capabilities of high-power GaN high electron mobility transistor (HEMT) devices for possible integration in high power solid-state amplifiers capable of operating under severe thermal and mechanical environments. Optimum device parameters, higher bias levels, and higher cutoff frequencies are needed to achieve higher power densities at MM-wave frequencies. High power GaN-HEMTs have potential applications in third-generation mobile communications systems, auto-collision radars, and high power T/R modules used in long range missile defense radars.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    High-power GaN-HEMT devices operating at MM-wave frequencies


    Contributors:
    Jha, A.R. (author)


    Publication date :

    2005-01-01


    Size :

    298757 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    FA2-6 High-power GaN-HEMT Devices Operating at MM-wave Frequencies

    Jha, A. | British Library Conference Proceedings | 2005


    Millimeter-wave optoelectronic mixers based on InP HEMT

    Chang-Soon Choi, / Woo-Young Choi, | IEEE | 2004


    Millimeter-Wave Optoelectronic Mixers based on InP HEMT

    Lasers and Electro-optics Society (Institute of Electrical and Electronics Engineers) | British Library Conference Proceedings | 2004


    Electro-Optic Modulation at Millimeter Wave Frequencies in GaAs/AlGaAs Guided Wave Devices

    IEEE / Lasers and Electro-Optics Society | British Library Conference Proceedings | 1995


    Millimeter-wave circuits based on advanced metamorphic HEMT technology

    Tessmann, A. / Leuther, A. / Schworer, C. et al. | IEEE | 2004