This letter reports on the large-area light-emission GaN LEDs with the size of 1050/spl times/1050 /spl mu/m/sup 2/ fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.


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    Title :

    Large emitting area GaN based light emitting diode fabricated on conducting copper substrates


    Contributors:
    Jung-Tang Chu, (author) / Wen-Deng Liang, (author) / Chen-Fu Chu, (author) / Kuo, H.C. (author) / Wang, S.C. (author)


    Publication date :

    2004-01-01


    Size :

    123161 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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