This letter reports on the large-area light-emission GaN LEDs with the size of 1050/spl times/1050 /spl mu/m/sup 2/ fabricated by metal bonding and LLO techniques. The large-area LEDs showed a uniform light-emission pattern over whole mesa without transparent contact layer due to uniform current spreading in n-type GaN layer. The large-area LEDs can easily be driven to above 1 A without output-power degradation, which is applicable to illumination applications.
Large emitting area GaN based light emitting diode fabricated on conducting copper substrates
2004-01-01
123161 byte
Conference paper
Electronic Resource
English
Large Emitting Area GaN Based Light Emitting Diode Fabricated on Conducting Copper Substrates
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