The III-V bulk and multiple quantum well (MQW) semiconductor electrooptic (EO) modulators have been successfully demonstrated with high modulation bandwidths. However, one of the drawbacks is a high switching voltage. This is mainly due to small EO coefficients of III-V semiconductor materials. Quantum dot (QD) devices have been predicted to be superior to bulk or MQW devices in optical nonlinearities and enhanced EO effects.


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    Title :

    InAs/InGaAs quantum dot Mach-Zehnder modulator at 1.55 /spl mu/m


    Contributors:


    Publication date :

    2005-01-01


    Size :

    720313 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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