In the present work the differential gain values for four Fabry-Perot (FP) InGaAs quantum well lasers of different lengths from the same wafer have been measured from their parasitic free relative intensity noise (RIN) spectra. Using the single mode rate equations, with Langevin noise sources, the measured RIN has been curve fitted in order to extract pertinent parameters related to the dynamic characteristic of the structure. By isolating the dependence of these parameters as a function of cavity length, a variation of the effective gain compression parameter with threshold gain is observed.<>
Damping effects in InGaAs/InP MQW Fabry-Perot lasers: the role of the threshold carrier density
Proceedings of LEOS '93 ; 580-581
1993-01-01
150905 byte
Conference paper
Electronic Resource
English
Damping Effects in InGaAs/InP MOW Fabry-Perot Lasers: The Role of the Threshold Carrier Density
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