A schematic diagram of a lift-off VCSEL structure designed to emit at 980 nm is shown. All devices herein are grown by molecular beam epitaxy on [001]-oriented GaAs substrates. The VCSELs have a standard triple InGaAs/AlGaAs quantum well active region within a 1 /spl lambda/-thick microcavity. The distributed Bragg reflectors (DBRs) are composed of GaAs and Al/sub 0.9/Ga/sub 0.1/As quarter-wave layers.


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    Title :

    Interconnected lift-off VCSELs for microcavity device arrays


    Contributors:
    Raley, J.A. (author) / Lott, J.A. (author) / Nelson, T.R. (author) / Stintz, A. (author) / Malloy, K.J. (author)


    Publication date :

    2002-01-01


    Size :

    293539 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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