OMVPE grown GaInNAs quantum well lasers with low threshold current (density) of 14.5mA (330A/cm/sup 2/) at 1.24 /spl mu/m, and high power operation (>60mW) at 1.30 /spl mu/m have been achieved.


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    Title :

    OMVPE grown 1.3 /spl mu/m GaInNAs quantum well lasers


    Contributors:
    Katsuyama, T. (author) / Yamada, T. (author) / Iguchi, Y. (author) / Takagishi, S. (author) / Murata, M. (author) / Hashimoto, J. (author) / Ishida, A. (author)


    Publication date :

    2002-01-01


    Size :

    109477 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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