Time-resolved photoluminescence and induced absorption measurements are used to investigate the ultrafast electronic processes in porous silicon. We observe transients ranging from less than 100 femtoseconds to well in excess of 10 microseconds. They are interpreted in terms of carrier thermalization, trapping and recombination.


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    Title :

    Ultrafast electronic processes in porous silicon


    Contributors:

    Published in:

    Proceedings of LEOS'94 ; 1 ; 305-306 vol.1


    Publication date :

    1994-01-01


    Size :

    151931 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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