Time-resolved photoluminescence and induced absorption measurements are used to investigate the ultrafast electronic processes in porous silicon. We observe transients ranging from less than 100 femtoseconds to well in excess of 10 microseconds. They are interpreted in terms of carrier thermalization, trapping and recombination.
Ultrafast electronic processes in porous silicon
Proceedings of LEOS'94 ; 1 ; 305-306 vol.1
1994-01-01
151931 byte
Conference paper
Electronic Resource
English
Ultrafast Electronic Processes in Porous Silicon
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