In this paper, comparison of self-assembled quantum dot lasers with and without strain compensation layers is performed. It is found that by introducing a strain compensation layers into the barriers of a multiple stacked dot active region the performance of the quantum dot layer is enhanced and the device with strain compensation show lower threshold currents, higher internal efficiencies and less absorption.


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    Title :

    Comparison of quantum dot lasers with and without strain compensation layers


    Contributors:
    Lever, P. (author) / Buda, M. (author) / Tan, H.H. (author) / Jagadish, C. (author)


    Publication date :

    2003-01-01


    Size :

    147388 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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