We have successfully fabricated a novel n-i-n photodetector operating at 1.55 /spl mu/m on GaAs. The characteristics at high-speed (above 20 GHz) and the high efficiency at high bias show that this kind of photodetector has potential application in the fields of long-wavelength optical-fiber communication and for integration with GaAs integrated circuits.


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    Title :

    Bias dependent performance of 1.55 /spl mu/m absorption high-speed n-i-n photodetectors using low-temperature grown GaAs


    Contributors:
    Yi-Jen Chiu (author) / Zhang, S.Z. (author) / Kaman, V. (author) / Ibbetson, J.P. (author) / Bowers, J.E. (author) / Mishra, U.K. (author)


    Publication date :

    1999-01-01


    Size :

    157870 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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