We have successfully fabricated a novel n-i-n photodetector operating at 1.55 /spl mu/m on GaAs. The characteristics at high-speed (above 20 GHz) and the high efficiency at high bias show that this kind of photodetector has potential application in the fields of long-wavelength optical-fiber communication and for integration with GaAs integrated circuits.
Bias dependent performance of 1.55 /spl mu/m absorption high-speed n-i-n photodetectors using low-temperature grown GaAs
1999-01-01
157870 byte
Conference paper
Electronic Resource
English
British Library Conference Proceedings | 1999
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