In summary a high-speed monolithically integrated photoreceiver composed of a InGaAs pin PD and InAlAs-InGaAs HEMT's (pin-HEMT) was constructed. Its sensitivity is -23.4 dBm in conjunction with an erbium-doped fiber pre-amplifier for a 15 Gbit/s NRZ lightwave signal. This is the first demonstration of the successful operation of a monolithically integrated photoreceiver at speeds beyond 10 Gbit/s.<>
15-Gbit/s high-speed monolithically integrated pin-HEMT photoreceiver
Proceedings of LEOS '93 ; 215-216
1993-01-01
172348 byte
Conference paper
Electronic Resource
English
15-Gbit/s High-Speed Monolithically Integrated pin-HEMT Photoreceiver
British Library Conference Proceedings | 1993
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