In summary a high-speed monolithically integrated photoreceiver composed of a InGaAs pin PD and InAlAs-InGaAs HEMT's (pin-HEMT) was constructed. Its sensitivity is -23.4 dBm in conjunction with an erbium-doped fiber pre-amplifier for a 15 Gbit/s NRZ lightwave signal. This is the first demonstration of the successful operation of a monolithically integrated photoreceiver at speeds beyond 10 Gbit/s.<>


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    Title :

    15-Gbit/s high-speed monolithically integrated pin-HEMT photoreceiver


    Contributors:
    Akatsu, Y. (author) / Miyamoto, Y. (author) / Akahori, Y. (author) / Ikeda, M. (author)

    Published in:

    Publication date :

    1993-01-01


    Size :

    172348 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    15-Gbit/s High-Speed Monolithically Integrated pin-HEMT Photoreceiver

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1993


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