We present an electrically thin, dual-band, perfect absorber design that can be scaled to operate in the far infrared (FIR) or THz band. A dual-polarization frequency selective surface (FSS) consisting of crossed dipoles is modified using additional parasitic tip metallizations to achieve dual-band performance. The conducting FSS layer is placed on a silicon carbide (SiC) substrate backed by a metallic ground. The structure is optimized for absorption efficiency over a wide incidence angle range for both transverse electric (TE) and transverse magnetic (TM) polarizations.


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    Title :

    Dual-band, Wide-incident-angle absorber for far-IR and THz frequencies


    Contributors:


    Publication date :

    2012-07-01


    Size :

    589434 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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