InGaN-GaN-AlGaN SCH MQW LDs were fabricated on an epitaxially laterally overgrown GaN (ELOG) substrate grown by MOCVD. The LDs with cleaved mirror facets showed an output power as high as 40 mW under RT-CW operation with a stable fundamental transverse mode. The lifetime of the LDs at a constant output power of 30 mW was 400-500 hours under CW operation at an ambient temperature of 60 C.


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    Title :

    Present status of InGaN-based violet laser diodes


    Contributors:


    Publication date :

    1999-01-01


    Size :

    223657 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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