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    Title :

    High-power 630-nm-band AIGalnP laser diodes with strain-compensated single quantum well active layer


    Contributors:
    Hiroyama, R. (author) / Nishida, T. (author) / Uetani, T. (author) / Bessho, Y. (author) / Shono, M. (author) / Sawada, M. (author) / Ibaraki, A. (author)


    Publication date :

    1997-01-01


    Size :

    289737 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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