In this paper a InGaAs/GaAs quantum dot in a well intersubband detectors were grown by molecular beam epitaxy (MBE). The spectral response of the detector is compared with the prediction of our theoretical model.


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    Title :

    Theoretical modeling and experimental characterization of InAs/lnGaAs dots in a well detector


    Contributors:
    Amtout, A. (author) / Raghavan, S. (author) / Rotella, P. (author) / von Winckel, G. (author) / Stintz, A. (author) / Krishna, S. (author)


    Publication date :

    2003-01-01


    Size :

    186359 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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