We have demonstrated a UV-laser diode with a lasing wavelength of 350.9 nm, which was grown on low-dislocation-density AlGaN template. The lasing operation under pulsed injection was achieved with the threshold current of about 200 mA.


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    Title :

    UV laser diode with 350.9 nm-lasing wavelength grown on AlGaN template


    Contributors:
    Kamiyama, S. (author) / Iida, K. (author) / Kawashima, T. (author) / Kasugai, H. (author) / Mishima, S. (author) / Honshio, A. (author) / Miyake, Y. (author) / Iwaya, M. (author) / Amano, H. (author) / Akasaki, I. (author)


    Publication date :

    2004-01-01


    Size :

    134055 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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