Hole lifetime in electroabsorption modulator integrated laser diode (EAM-LD) has been reduced to 7ps by employing a shallow quantum well (QW) absorption layer. 10Gbps-80km SMF transmission has been achieved at +5.3dBm fiber launched power.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Shallow quantum well EAM-LD with short hole lifetime for high-power and long-reach 10Gbps transmitters


    Contributors:
    Miyazaki, Y. (author) / Yamatoya, T. (author) / Matsumoto, K. (author) / Aoyagi, T. (author) / Nishimura, T. (author)


    Publication date :

    2005-01-01


    Size :

    225535 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Direct Modulation of Hybrid-Integrated InP/Si Transmitters for Short and Long Reach Access Network

    de Valicourt, Guilhem / Levaufre, Guillaume / Pointurier, Yvan et al. | British Library Online Contents | 2015


    ThG3 10Gbps All Silicon APD Optical Receiver

    IEEE | British Library Conference Proceedings | 2002


    Compact 10Gbps InP-Based Waveguide Modulator

    Nakagawa, S. / Soda, H. | IEEE | 2005



    Optical Memory with 10Gbps Data Rate Using 2-D VCSEL Array

    Goto, K. / Mitsugi, S. / Kurihara, K. et al. | British Library Conference Proceedings | 2001