Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 /spl deg/C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (/spl alpha/-) GaAs prepared at between room temperature and 250 /spl deg/C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.
Terahertz radiation from amorphous GaAs thin film photoconductive switches
1999-01-01
156077 byte
Conference paper
Electronic Resource
English
2-D Electro-Optic Sampling in GaAs Photoconductive Switches
British Library Conference Proceedings | 1994
|NOVEL TERAHERTZ PHOTOCONDUCTIVE ANTENNAS
British Library Online Contents | 2006
|