Low-temperature grown GaAs (LT-GaAs) has been studied as a potential material for microwave-photonic devices such as a terahertz (THz) radiation emitter. Since the preparation of the LT-GaAs generally requires a post annealing process at around 600 /spl deg/C, these has been limited to be a small number of the applications combined with other materials. In the present work, we study the photoresponse of amorphous (/spl alpha/-) GaAs prepared at between room temperature and 250 /spl deg/C by femtosecond time-domain reflection pump-probe measurements and photo-induced THz emission measurements.


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    Title :

    Terahertz radiation from amorphous GaAs thin film photoconductive switches


    Contributors:
    Kiwa, T. (author) / Kawashima, I. (author) / Morimoto, M. (author) / Saijyo, H. (author) / Nashima, S. (author) / Yamashita, M. (author) / Tonouchi, M. (author) / Hangyo, M. (author)


    Publication date :

    1999-01-01


    Size :

    156077 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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