We report on 630 nm-band AIGalnP strained MQW laser diodes incorporating an MQB. The laser offer high-temperature operation over 60/spl deg/C and have been operating reliably for more than 1,000 h under 3 mW at 45/spl deg/C.


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    Title :

    630 nm-band AlGaInP strained MQW laser diodes with an MQB grown on misoriented substrates


    Contributors:
    Hiroyama, R. (author) / Hamada, H. (author) / Shono, M. (author) / Honda, S. (author) / Yodoshi, K. (author) / Yamaguchi, T. (author)


    Publication date :

    1992-01-01


    Size :

    130664 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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