An analytic solution is obtained for the three-dimensional heat diffusion equation applied to a model for a multifinger power transistor. It predicts that the thermal instability takes place based on localized heating and positive feedback. The condition of thermal stability found by Navon and Miller [1] differs from that encountered in this paper.


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    Title :

    Thermal Instability and Secondary Breakdown in Power Transistors


    Contributors:

    Published in:

    Publication date :

    1971-11-01


    Size :

    1078636 byte




    Type of media :

    Article (Journal)


    Type of material :

    Electronic Resource


    Language :

    English



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