GaN:Er prepared by metalorganic molecular beam epitaxy shows intense 1.54 /spl mu/m photoluminescence (PL) at room temperature. Efficient below-gap absorption bands have been identified using photoluminescence excitation spectroscopy. An infrared hybrid InGaN-GaN:Er LED operating at 1.54 /spl mu/m has been demonstrated. Even though the resulting emission at 1.54 /spl mu/m was weak, it shows that the electroluminescence from InGaN can be used to excited Er ions in GaN.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Spectroscopy and 1.54 /spl mu/m light emitting device based on erbium-doped gallium nitride


    Contributors:
    Seo, J.T. (author) / Hommerich, U. (author) / Thaik, M. (author) / MacKenzie, J.D. (author) / Abernathy, C.R. (author) / Zavada, J.M. (author)


    Publication date :

    1999-01-01


    Size :

    138174 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



    Erbium-doped porous silicon emits at 1.54 m

    British Library Online Contents | 1996


    Toward a 1.54 m Electrically Driven Erbium-Doped Silicon Slot Waveguide and Optical Amplifier

    Tengattini, A. / Gandolfi, D. / Prtljaga, N. et al. | British Library Online Contents | 2013


    Nanocrystalline Rare Earth-Doped Gallium Nitride Phosphor Powders

    Hirata, G. A. / Tao, J. / Chen, P. et al. | British Library Conference Proceedings | 2005


    Intensity based erbium distribution for erbium doped fiber amplifiers

    Hassani, A. / Arzi, E. / Seraji, F. E. | British Library Online Contents | 2007


    Present Status of 1.54 GeV ATF Linac

    Takeda, S. / Ko-Enerugi Butsurigaku Kenkyujo | British Library Conference Proceedings | 1997