Summary form only given. The semiconductor optical amplifier (SOA) has many potential applications in future all-optical transmission systems. Four wave mixing (FWM) in SOA has been proposed as a technique for performing wavelength conversion due to its high conversion efficiency and fast speed response in wavelength division multiplexing (WDM). A two-section SOA has been developed to increase its gain performance while facilitating the heat dissipation in the chip. The two sections are joined by a passive waveguide region. The amplifier wafer was grown by MOCVD (metal organic chemical vapor deposition) growth process on a [100] oriented InP substrate using two growth steps.


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    Title :

    Four wave mixing in semiconductor optical amplifier


    Contributors:
    Wu, C. (author) / Fan, H. (author) / Dutta, N.K. (author) / Koren, U. (author) / Chen, C.H. (author) / Piccirilli, A.B. (author)


    Publication date :

    1999-01-01


    Size :

    324709 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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