We report our efforts on ITO-AlAs/GaAs based resonant cavity enhanced (RCE) Schottky photodiodes for operation at the first optical communication window (840 nm). The device structure is designed to achieve a low-loss (high Q) cavity around 840 nm. The layers are grown by MBE on a semi-insulating GaAs substrate. The resonant cavity is formed by an Al/sub 0.2/Ga/sub 0.8/As/AlAs DBR bottom mirror and a PECVD-grown Si/sub 3/N/sub 4//SiO/sub 2/ DBR top mirror, both centered at 840 nm. At the operation wavelength, only the active GaAs region absorbs the optical excitation.
High-performance ITO-AlAs/GaAs based resonant cavity enhanced Schottky photodiodes
1999-01-01
238506 byte
Conference paper
Electronic Resource
English
High-Performance ITO-AIAs/GaAs based Resonant Cavity Enhanced Schottky Photodiodes
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