We have characterized the dynamic properties of single- and multi-dot layer (to enhance the confinement factor) single mode self-assembled InGaAs-GaAs quantum dot lasers at room temperature. In particular, we have investigated tunneling injection of electrons in quantum dot lasers, as a means to overcome the carrier relaxation bottleneck, for the first time.
Small-signal modulation characteristics of self-organized quantum dot separate confinement heterostructure and tunneling injection lasers
1997-01-01
194220 byte
Conference paper
Electronic Resource
English
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