We have characterized the dynamic properties of single- and multi-dot layer (to enhance the confinement factor) single mode self-assembled InGaAs-GaAs quantum dot lasers at room temperature. In particular, we have investigated tunneling injection of electrons in quantum dot lasers, as a means to overcome the carrier relaxation bottleneck, for the first time.


    Access

    Check access

    Check availability in my library

    Order at Subito €


    Export, share and cite



    Title :

    Small-signal modulation characteristics of self-organized quantum dot separate confinement heterostructure and tunneling injection lasers


    Contributors:


    Publication date :

    1997-01-01


    Size :

    194220 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




    Self-consistent simulation on the modal gain of graded-index separate-confinement-heterostructure quantum-well lasers

    Houng, M. P. / Wang, Y. H. / Chong, K. K. et al. | British Library Online Contents | 2002


    Optical gain enhancement in InP-based quantum-well lasers with n-doped separate confinement heterostructure layers

    Seki, S. / Yokoyama, K. / Optical Society of America | British Library Conference Proceedings | 1998



    Broadened Waveguide Design for Separate Confinement Quantum Well Lasers

    IEEE; Lasers and Electro-Optics Society | British Library Conference Proceedings | 1996