We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al/sub 0.3/Ga/sub 0.7/As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C.


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    Title :

    Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)


    Contributors:
    Kondow, M. (author) / Kitatani, T. (author) / Aoki, M. (author) / Nakatsuka, S. (author) / Kudo, M. (author)


    Publication date :

    2001-01-01


    Size :

    102932 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English




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