In this paper, we propose a novel long-wavelength VCSEL with an oxidized AlAs confinement structure which is grown on an InP substrate. We expect the proposed structure will provide a threshold reduction and a high temperature operation of long wavelength VCSELs. We present some characteristics of AlAs oxidation on InP substrates and demonstrate GaInAs-AlGaInAs edge emitting lasers (/spl Lambda/=1.65 /spl mu/m) with the AlAs-oxide current confinement for the first time.


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    Title :

    Proposal of an AlAs-oxide current confinement structure for GaInAs/AlGaInAs long wavelength surface emitting lasers


    Contributors:
    Ohmoki, N. (author) / Hatori, N. (author) / Mizutani, A. (author) / Koyama, F. (author) / Iga, K. (author)


    Publication date :

    1996-01-01


    Size :

    197812 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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