Nonlinear optical devices, with silicon-on-insulator material system as platform for their fabrication are discussed. Third order nonlinearity in silicon offers active functionalities in silicon by taking advantage of the high index contrast and tight beam confinement. Among the third order effects; Raman, Kerr nonlinearity, two-photon absorption are particularly strong.


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    Title :

    Nonlinear optical devices in silicon


    Contributors:
    Jalali, B. (author) / Boyraz, O. (author) / Koonath, P. (author) / Raghunathan, V. (author) / Dimitropoulos, D. (author) / Indukuri, T. (author)


    Publication date :

    2005-01-01


    Size :

    449985 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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