Recent data on two approaches for 1.3 /spl mu/ laser operation on GaAs substrates, InAs QDs and InGaNAs QWs, are presented. Lasers fabricated with epitaxial films of MBE grown InAs/InGaAs quantum dots have shown to be capable of ultra low threshold current operation near 1 mA while reaching several mW power level. MOCVD grown InGaNAs quantum wells showed low threshold density of less than 400 A/cm/sup 2/.


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    Title :

    Long wavelength laser diodes based on GaAs diodes based on GaAs


    Contributors:
    Chi, J. (author) / Wang, J.S. (author) / Liu, Y.S. (author)


    Publication date :

    2003-01-01


    Size :

    249805 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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