Direct intensity modulation at 3 Gb/s is demonstrated with a 980 nm semiconductor laser diode, which is mainly designed for EDFA pumping applications at high power and reliability. Implications of operating conditions on system performance are addressed.


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    Title :

    High power 980 nm laser diode for free space communications at high bitrates


    Contributors:
    Mohrdiek, S. (author) / Harder, C. (author)


    Publication date :

    1998-01-01


    Size :

    193429 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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