Integrated circuits based on metamorphic InAlAs/InGaAs HEMTs with 70 nm gate length on 4" GaAs substrates for millimeter-wave applications are discussed in this paper. Extrinsic cut-off frequencies of f/sub t/=293 GHz and f/sub max/=337 GHz were achieved. The IC process features high yield on transistor and circuit levels. Single-stage low-noise amplifiers demonstrate a small signal gain of 12 dB and a noise figure of 2.2 dB at 94 GHz. An amplifier MMIC developed for G-band operation exhibits a gain of 19 dB at 200 GHz. These results are equivalent to those achieved using state-of-the-art InP-based HEMT technologies.


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    Title :

    Millimeter-wave circuits based on advanced metamorphic HEMT technology


    Contributors:
    Tessmann, A. (author) / Leuther, A. (author) / Schworer, C. (author) / Massler, H. (author) / Reinert, W. (author) / Walther, M. (author) / Losch, R. (author) / Schlechtweg, M. (author)


    Publication date :

    2004-01-01


    Size :

    173875 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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