We show for the first time that the differential carrier lifetime (/spl tau//sub d/) of identical In/sub 0.4/Ga/sub 0.6/As/GaAs/sub 0.85/P/sub 0.15//GaAs single QW broad area lasers with and without the addition of nitrogen (/spl lambda/ = 1.2-1.3 /spl mu/m) significantly reduces with the incorporation of nitrogen.
Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (/spl lambda/ = 1.2-1.3 /spl mu/m) lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 4 pp. vol.1
2004-01-01
185366 byte
Conference paper
Electronic Resource
English
Carrier Lifetime Measurement of Long Wavelength GaInNAs Lasers
British Library Conference Proceedings | 1998
|GaInNAs/GaAs long-wavelength lasers
SPIE | 1998
|Record-Low Thresholds of Long-Wavelength InGaAsN/GaAs SQWs Lasers
British Library Conference Proceedings | 2004
|High Performance Long-Wavelength QD Diode Lasers on GaAs Substrates
British Library Conference Proceedings | 2002
|