We show for the first time that the differential carrier lifetime (/spl tau//sub d/) of identical In/sub 0.4/Ga/sub 0.6/As/GaAs/sub 0.85/P/sub 0.15//GaAs single QW broad area lasers with and without the addition of nitrogen (/spl lambda/ = 1.2-1.3 /spl mu/m) significantly reduces with the incorporation of nitrogen.


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    Title :

    Effect of nitrogen concentration on carrier lifetime in GaAs based long wavelength (/spl lambda/ = 1.2-1.3 /spl mu/m) lasers


    Contributors:
    Anton, O. (author) / Patel, D. (author) / Menoni, C.S. (author) / Jeng-Ya Yeh, (author) / Mawst, L. (author) / Pikal, J.Mv. (author) / Tansu, N. (author)


    Publication date :

    2004-01-01


    Size :

    185366 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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