High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.


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    Title :

    Vertically integrated InGaAsP/InP microstack lasers


    Contributors:
    An, H. (author) / Chan, K. (author) / Shellenbarger, Z.A. (author) / Willner, B.I. (author)


    Publication date :

    2004-01-01


    Size :

    195289 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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