High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.
Vertically integrated InGaAsP/InP microstack lasers
Conference on Lasers and Electro-Optics, 2004. (CLEO). ; 1 ; 2 pp. vol.1
2004-01-01
195289 byte
Conference paper
Electronic Resource
English
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