High power vertically integrated 1.59 /spl mu/m wavelength InGaAsP/InP microstack lasers with three identical optically decoupled emitters series-connected through low resistance tunnel junctions have been realized by MOCVD growth for the first time.


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    Titel :

    Vertically integrated InGaAsP/InP microstack lasers


    Beteiligte:
    An, H. (Autor:in) / Chan, K. (Autor:in) / Shellenbarger, Z.A. (Autor:in) / Willner, B.I. (Autor:in)


    Erscheinungsdatum :

    2004-01-01


    Format / Umfang :

    195289 byte



    Medientyp :

    Aufsatz (Konferenz)


    Format :

    Elektronische Ressource


    Sprache :

    Englisch



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