Efficient GHz silicon detectors in unmodified CMOS processes are attractive for dense optical interconnection to electronics. Using blue short pulses we demonstrate 50 ps rise time lateral P-I-N detectors in a commercial silicon-on-sapphire CMOS process.


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    Title :

    Transit-time limited response from low capacitance CMOS photodetectors


    Contributors:
    Bhatnagar, A. (author) / Latif, S. (author) / Miller, D.A.B. (author)


    Publication date :

    2004-01-01


    Size :

    131226 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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