We achieved the highest average power (0.45 W) and efficiency (20% slope) to date from an OPGaAs OPO. QPM structures >1 mm thick were grown by HVPE on 3-inch diameter multi-grating templates produced by MBE.
2.05-/spl mu/m-laser-pumped orientation-patterned gallium arsenide (OPGaAs) OPO
(CLEO). Conference on Lasers and Electro-Optics, 2005. ; 3 ; 1835-1837 Vol. 3
2005-01-01
1728680 byte
Conference paper
Electronic Resource
English
2.05-mum-Laser-Pumped Orientation-Patterned Gallium Arsenide (OPGaAs) OPO
British Library Conference Proceedings | 2005
|130 mJ, 10 Hz, Q-Switched Diode-Pumped Ho:Tm:LuLF Laser Oscillator at 2.05 mum
British Library Conference Proceedings | 2005
|Gallium arsenide as a laser pump
NTRS | 1963
|Gallium arsenide phosphide injection laser diodes
TIBKAT | 1967
|