A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275 nm period diffraction grating and multilevel refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers.
Monolithic integration of dual layer optics on broad area semiconductor lasers
2003-01-01
208880 byte
Conference paper
Electronic Resource
English
Monolithic Integration of Semiconductor Lasers and Diffractive Optical Elements
British Library Conference Proceedings | 2001
|High-power monolithic semiconductor diode lasers
IEEE | 2003
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