A broad area InGaAs semiconductor laser diode with two monolithically integrated optical elements, a 275 nm period diffraction grating and multilevel refractive lens, is presented. We discuss the potential of dual optics integration for beam shaping of high power lasers and amplifiers.


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    Title :

    Monolithic integration of dual layer optics on broad area semiconductor lasers


    Contributors:
    Vaissie, L. (author) / Mohammed, W. (author) / Johnson, E.G. (author)


    Publication date :

    2003-01-01


    Size :

    208880 byte



    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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