Summary form only given. Low temperature near-field scanning optical microscopy/spectroscopy has proven useful in characterization of quantum confined semiconductor structures even to the extent of revealing the individual optically active quantum constituents of such a system. Specifically, sharp (<0.07 meV), spectrally distinct emission lines of a GaAs/AlGaAs quantum well can be imaged at a specific spatial location, or as a spectral evolution image as the probe is scanned along a line across the surface, or as a real space image at a specific luminescence wavelengths. Temperature, magnetic field, and line width measurements establish that these luminescence centers arise from excitons localized at interface fluctuations.


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    Title :

    Near-field optical characterization of quantum wells and nanostructures


    Contributors:
    Hess, H.F. (author) / Betzig, E. (author) / Harris, T. (author) / Pfieffer, L. (author) / West, K. (author)

    Published in:

    Proceedings of LEOS'94 ; 2 ; 211-212 vol.2


    Publication date :

    1994-01-01


    Size :

    284668 byte




    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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