In this study, we experimentally demonstrate that, by using the injection locking method, a modulation bandwidth of 35 GHz that is free from electrical parasitic effects is achieved in 1.3-/spl mu/m DFB lasers. In this experimental the output of the master laser is used to injection lock the slave laser, and that of the slave laser is sent to a detection system to measure optical and power spectra. Power spectra are obtained by using a photodiode and by displaying the signal on a microwave spectrum analyzer. Optical spectra are taken by using a scanning Fabry-Perot interferometer. At bias current level, the intrinsic parameters of the slave laser are experimentally determined by using the four-wave mixing method. The enhancement in the modulation bandwidth is more than two folds.


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    Title :

    35-GHz modulation bandwidth in injection-locked semiconductor lasers


    Contributors:
    Hwang, S.K. (author) / Liu, J.M. (author) / White, J.K. (author)


    Publication date :

    2003-01-01


    Size :

    130930 byte





    Type of media :

    Conference paper


    Type of material :

    Electronic Resource


    Language :

    English



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