We report fibre-coupled CW diode pumping of 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity semiconductor optical amplifiers (VCSOAs) and surface emitting lasers (VCSELs). The GaInNAs/GaAs structures are monolithic and are specifically designed for optical pumping, offering advantages in design simplification and added functionality. They allow us to demonstrate up to 1.09 dB of amplification and up to 213 /spl mu/W of 1297.2 nm laser emission. Both the 980 nm pump light and 1.3 /spl mu/m signal are coupled to/from the devices by fibers, giving promising systems-compatible demonstrators of GaInNAs-based amplifier technology.
Amplification and laser action in diode-pumped 1.3 /spl mu/m GaInNAs vertical-cavity structures
The 15th Annual Meeting of the IEEE Lasers and Electro-Optics Society ; 1 ; 165-166 vol.1
2002-01-01
98851 byte
Conference paper
Electronic Resource
English
TuC4 Amplification and Laser Action in Diode-Pumped 1.3mum GaInNAs Vertical-Cavity Structures
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